{"title":"Physics-based analytical model of chalcogenide-based memories for array simulation","authors":"D. Ielmini, Yuegang Zhang","doi":"10.1109/IEDM.2006.346795","DOIUrl":null,"url":null,"abstract":"The conduction mechanisms in chalcogenide materials for phase-change memory (PCM) applications are studied. A trap-limited transport model for sub-threshold conduction in the amorphous chalcogenide is presented, and extended to threshold switching in the amorphous phase and transport in the highly-conductive crystalline phase, providing a fully-comprehensive, analytical model for PCMs. Finally, a PCM self-rectifying cross-point device is studied with the aid of the model, allowing to evaluate the array performance for different temperatures, read scheme and array size","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346795","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
The conduction mechanisms in chalcogenide materials for phase-change memory (PCM) applications are studied. A trap-limited transport model for sub-threshold conduction in the amorphous chalcogenide is presented, and extended to threshold switching in the amorphous phase and transport in the highly-conductive crystalline phase, providing a fully-comprehensive, analytical model for PCMs. Finally, a PCM self-rectifying cross-point device is studied with the aid of the model, allowing to evaluate the array performance for different temperatures, read scheme and array size
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