S. Kim, T. J. Ha, S. Kim, Jae Yeon Lee, K. Kim, Jungho Shin, Yong Taek Park, S. P. Song, B. Kim, W. Kim, Jong Chul Lee, Hyun Sun Lee, Jong Hwang Song, E. Hwang, S. Cho, J. Ku, Jong Il Kim, Kyu Sung Kim, Jong-Hee Yoo, Hyo Jin Kim, Hoe Gwon Jung, Kee-jeung Lee, Suock Chung, Jong Kang, Jung Hoon Lee, H. Kim, S. Hong, G. Gibson, Yoocharn Jeon
{"title":"Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM","authors":"S. Kim, T. J. Ha, S. Kim, Jae Yeon Lee, K. Kim, Jungho Shin, Yong Taek Park, S. P. Song, B. Kim, W. Kim, Jong Chul Lee, Hyun Sun Lee, Jong Hwang Song, E. Hwang, S. Cho, J. Ku, Jong Il Kim, Kyu Sung Kim, Jong-Hee Yoo, Hyo Jin Kim, Hoe Gwon Jung, Kee-jeung Lee, Suock Chung, Jong Kang, Jung Hoon Lee, H. Kim, S. Hong, G. Gibson, Yoocharn Jeon","doi":"10.1109/IEDM.2015.7409668","DOIUrl":null,"url":null,"abstract":"In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and forming characteristics were improved by using stack engineering of top and bottom barriers as well as spacer materials. Finally array operation was characterized with the integration of selector and resistor materials.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
In this paper, the authors report that 2x nm cross-point ReRAM with 1S1R structure has been successfully developed. Off-current at 1/2 Vsw of 1S1R is one of key factor for high-density ReRAM. NbO2 was chosen as a selector material and off-current and forming characteristics were improved by using stack engineering of top and bottom barriers as well as spacer materials. Finally array operation was characterized with the integration of selector and resistor materials.
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