{"title":"Conductance transient characterization of reactive ion etched HEMT gate recesses","authors":"J. Schramm, M. Mondry, E. Hu, J. Merz","doi":"10.1109/ICIPRM.1994.328189","DOIUrl":null,"url":null,"abstract":"A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"63 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
