An InGaSb p-channel FinFET

Abstract

We demonstrate the first InGaSb p-channel FinFET. Towards this goal, we have developed a fin dry-etch technology which yields fins as narrow as 15 nm with vertical sidewalls, an aspect ratio greater than 10 and low sidewall interface state density. We have also realized Si-compatible ohmic contacts with ultra-low contact resistivity of 3.5-10-8 Q-cm2. InGaSb FinFETs with fin widths down to 30 nm and gate lengths down to 100 nm have been fabricated. The Al2O3 gate oxide has an EOT of 1.8 nm. A high gm of 122 μS/μm is obtained in devices of Wf = 100 nm and Lg = 100 nm. In the smallest devices with Wf = 30 nm and Lg = 100 nm, a gm of 78 μS/μm is achieved.