K. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, I. Meric, S. Ramey
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引用次数: 0
Abstract
The source-drain punch-through current in off-state TDDB stress (OSS) is shown to significantly affect off-state breakdown behavior. This paper compares various OSS methodologies available in the literature and discusses how source-to-drain punch-through affects off-state breakdown and reliability. The proposed Drain-stress with Offset (DSO) OSS methodology limits punch-through to better reflect the actual field dependence of OSS breakdown for scaled tri-gate MOSFET technologies.
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