{"title":"Efficient fWLR inline monitoring of hot carrier reliability by means of one simple, comprehensive parameter","authors":"R. Vollertsen, H. Nielen","doi":"10.1109/IRWS.2005.1609572","DOIUrl":null,"url":null,"abstract":"Efficient, quantitative inline monitoring of reliability parameters requires considering various dependencies and influences. This work deals with monitoring of conducting hot carrier degradation - but works for other device stress types as well - and develops a single but comprehensive parameter for a control card, that takes into account the device length variation, deviation from a reference device (e.g. the nominal device) and deviation from device reliability model as determined during the process qualification. The derivation and implementation of the method and parameter is described in detail. Alternative parameter calculations are discussed. Examples are given to illustrate the feasibility and usability of the simple and comprehensive parameter","PeriodicalId":214130,"journal":{"name":"2005 IEEE International Integrated Reliability Workshop","volume":"15 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Integrated Reliability Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2005.1609572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Efficient, quantitative inline monitoring of reliability parameters requires considering various dependencies and influences. This work deals with monitoring of conducting hot carrier degradation - but works for other device stress types as well - and develops a single but comprehensive parameter for a control card, that takes into account the device length variation, deviation from a reference device (e.g. the nominal device) and deviation from device reliability model as determined during the process qualification. The derivation and implementation of the method and parameter is described in detail. Alternative parameter calculations are discussed. Examples are given to illustrate the feasibility and usability of the simple and comprehensive parameter
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