E. Piner, S. Singhal, P. Rajagopal, R. Therrien, J. Roberts, Tao Li, A. Hanson, J. W. Johnson, I. Kizilyalli, K. Linthicum
{"title":"Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities","authors":"E. Piner, S. Singhal, P. Rajagopal, R. Therrien, J. Roberts, Tao Li, A. Hanson, J. W. Johnson, I. Kizilyalli, K. Linthicum","doi":"10.1109/IEDM.2006.346798","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
AlGaN/GaN HFET devices demonstrate remarkable performance. For commercial acceptance of this technology, long-term device stability must meet stringent industry standards. We review the current status of GaN reliability and contrast it with the requirement for commercial viability. Results analyzing degradation pertaining to buffer leakage and gate diode forward failure is presented
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