Reliability of InGaZnO Transparent ReRAM with Optically Active Pt-Nanodisks

Abstract

Reliability of a transparent Ag/indium-gallium-zinc-oxide (InGaZnO)/ITO ReRAM was assessed in terms of its dc-endurance and retention while InGaZnO contained optically active platinum nanodisks (Pt-ND) in it. It was observed that, $\lambda \mathbf{=500}$ nm can improve margin between HRS and LRS due to localized surface plasmon resonance (LSPR) that creates active surfaces on the Pt-NDs as suitable for chemical reduction of $\mathbf{Ag}^{+}$ cations and growth of conductive filament (CF) under SET bias; LSPR also reduces HRS current due to localized electrons around the surfaces of Pt-NDs. On the contrary, CF was unstable during longer $\lambda$ (700 nm) interaction with Pt-NDs, due to larger extinction cross sections of large diameter NDs that liberate more hot electrons through non-radiative channels preventing easy reoxidation/dissociation of CF under dc-cycles