{"title":"A test structure for spectrum analysis of hot-carrier-induced photoemission from subquarter-micron CMOSFETs","authors":"S. Odanaka, K. Yamashita, N. Koike, K. Tatsuuma","doi":"10.1109/ICMTS.2002.1193178","DOIUrl":null,"url":null,"abstract":"Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-h/spl nu//kT/sub e/).","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2002.1193178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Hot-carrier-induced photoemission of subquarter-micron CMOSFETs is analyzed using a specially designed test structure, which has a wide channel width of 2.0 mm, for sufficient photoemission intensity. Since the test structure consists of parallel-connected unit MOSFETs and photoemission images are uniform, it can be estimated that measured spectra are the same as those from unit MOSFETs. The relation between photon counts and photon energy suggests that photon energy has a Boltzman distribution; exp(-h/spl nu//kT/sub e/).
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