High power SiC-devices. New result and prospects

Abstract

In this work, theoretical analysis is given of SiC parameters which are important for electronic device production. Also, a comparative description of the different technological methods used for SiC growth is given. For substrate growth, the Lely method and modified Lely method are examined; for n-type epilayer growth, sublimation epitaxy (SE), container free liquid phase epitaxy (CFLPE), and chemical vapour deposition (CVD) are compared; for p-n junction production, SE, CFLPE, CVD, Al implantation (ID) and boron diffusion are compared; and for mesa structure formation, plasma-ion etching is examined.