{"title":"25 nm Planar Bulk SONOS-type Memory with Double Tunnel Junction","authors":"R. Ohba, Y. Mitani, N. Sugiyama, S. Fujita","doi":"10.1109/IEDM.2006.346945","DOIUrl":null,"url":null,"abstract":"25nm gate length bulk-planar SONOS-type memory, which has Si nanocrystalline layer between double tunnel oxides, shows excellent memory characteristics due to Coulomb blockade and quantum confinement in Si nanocrystals. A direct evidence of great advantage in trade-off between charge retention and w/e speed is shown experimentally, and it is shown that further device scaling and improvement are possible by Si nanocrystal size scaling. Double tunnel junction SONOS-type memory is a strong candidate in less than 25nm region","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
25nm gate length bulk-planar SONOS-type memory, which has Si nanocrystalline layer between double tunnel oxides, shows excellent memory characteristics due to Coulomb blockade and quantum confinement in Si nanocrystals. A direct evidence of great advantage in trade-off between charge retention and w/e speed is shown experimentally, and it is shown that further device scaling and improvement are possible by Si nanocrystal size scaling. Double tunnel junction SONOS-type memory is a strong candidate in less than 25nm region
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
