S.I. InP:Fe Hydride-Vpe for Mushroom Type Lasers

R. Gobel, H. Janning, H. Burkhard
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引用次数: 4

Abstract

Highly resistive s.i. InP:Fe grown with the Hydride-Vapor Phase Epitaxy technique is successfully used for selective embedding of mushroom type laser structures. The iron doped InP reveals resistivities from 10/sup 7/ to 10/sup 9/ Q/spl Omega/cm resulting in good current blocking properties and in the reduction of the parasitic capacity, as well. High frequency response of 13 GHz has been achieved.
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用于蘑菇型激光器的氢化铁- vpe
利用氢化物-气相外延技术生长的高阻si . InP:Fe成功地用于蘑菇型激光结构的选择性嵌入。铁掺杂的InP显示出从10/sup 7/到10/sup 9/ Q/spl ω /cm的电阻率,从而产生良好的电流阻断性能,并且降低了寄生容量。实现了13ghz的高频响应。
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