High-temperature amorphous-like semiconductors

O. A. Golikova, M. Kazanin
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Abstract

The experimental results of a study of high-temperature boron-rich semiconductors, such as /spl alpha/- and /spl beta/-AlB/sub 12/, MgAlB/sub 14/, and REB/sub 66/ (where RE are rare earths, e.g. Gd), are reviewed. They were shown to represent a novel class of unique solids, combining physico-chemical properties of refractory crystals with electrical, optical and thermal properties typical for amorphous semiconductors due to specific features of their lattice. These semiconductors are believed to be promising for high-temperature device applications.
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高温非晶状半导体
综述了高温富硼半导体的实验结果,如/spl α /-和/spl β /- alb /sub 12/、MgAlB/sub 14/和REB/sub 66/(其中RE为稀土,如Gd)。他们被证明是一种新型的独特固体,结合了难熔晶体的物理化学性质和非晶半导体的电学、光学和热学性质,这是由于他们的晶格的特定特征。这些半导体被认为有希望用于高温器件应用。
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