{"title":"IREM usage in the detection of highly resistive failures on 65nm products","authors":"I. Wan, D. Bockelman, Yun Xuan, S. Chen","doi":"10.1109/IRWS.2005.1609577","DOIUrl":null,"url":null,"abstract":"Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where \"abnormal\" photon/thermal emissions are generated. Failures caused by metal shorts, contending nodes or electrical overstress are some of the issues that affect the normal operation of a circuit and result in intense emissions in the near infra-red (NIR) spectrum. IREM has proven successful in locating these faults and in this paper, we expand the usage of this tool by showing its effectiveness in the detection of failures caused by highly resistive nodes. We establish this idea with circuit simulation results and show real Si data that was seen on 65nm process technology products.","PeriodicalId":214130,"journal":{"name":"2005 IEEE International Integrated Reliability Workshop","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Integrated Reliability Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2005.1609577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where "abnormal" photon/thermal emissions are generated. Failures caused by metal shorts, contending nodes or electrical overstress are some of the issues that affect the normal operation of a circuit and result in intense emissions in the near infra-red (NIR) spectrum. IREM has proven successful in locating these faults and in this paper, we expand the usage of this tool by showing its effectiveness in the detection of failures caused by highly resistive nodes. We establish this idea with circuit simulation results and show real Si data that was seen on 65nm process technology products.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
