NBTI in SOI p-channel MOS field effect transistors

Abstract

In this paper we describe NBTI tests and report results for partially depleted (PD) SOI MOSFETs selected from 0.35 and 0.15 /spl mu/m technologies for harsh environment (i.e., space, high temperature, etc.) applications. When studying "pure" NBTI degradation, we find that the results are similar to bulk technologies, and in good agreement with the standard reaction-diffusion (R-D) theory of NBTI. However, when both gate and drain are biased as in a hot carrier injection (HCI) degradation situation, an interesting interaction of HCI and NBTI is observed, which leads to the resolution of the question of worst case HCI stress conditions for p-channel SOI MOSFETs with thin gate oxides.