T. Tran, R. Weis, A. Sieck, T. Hecht, G. Aichmayr, M. Goldbach, P.-F. Wang, A. Thies, G. Wedler, J. Nuetzel, D. Wu, C. Eckl, R. Duschl, T.-M. Kuo, Ying-Tse Chiang, W. Mueller
{"title":"A 58nm Trench DRAM Technology","authors":"T. Tran, R. Weis, A. Sieck, T. Hecht, G. Aichmayr, M. Goldbach, P.-F. Wang, A. Thies, G. Wedler, J. Nuetzel, D. Wu, C. Eckl, R. Duschl, T.-M. Kuo, Ying-Tse Chiang, W. Mueller","doi":"10.1109/IEDM.2006.346848","DOIUrl":null,"url":null,"abstract":"The authors present for the first time the full integration scheme and 512Mb product data for a trench DRAM technology targeting the 58nm node. The key technology enablers such as an extended U-shape cell device (EUD), high performance support devices, trench capacitor with metal-insulator-silicon (MIS)/high-k dielectric and metal-in-collar (MIC), and low-k inter-level dielectric (ILD) are demonstrated","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
The authors present for the first time the full integration scheme and 512Mb product data for a trench DRAM technology targeting the 58nm node. The key technology enablers such as an extended U-shape cell device (EUD), high performance support devices, trench capacitor with metal-insulator-silicon (MIS)/high-k dielectric and metal-in-collar (MIC), and low-k inter-level dielectric (ILD) are demonstrated
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
