Y. Hayashi, F. Itoh, Y. Harada, T. Takeuchi, M. Tada, M. Tagami, H. Ohtake, K. Hijioka, S. Saito, T. Onodera, D. Hara, K. Tokudome
{"title":"Novel molecular-structure design for PECVD porous SiOCH films toward 45nm node, ASICs with k=2.3","authors":"Y. Hayashi, F. Itoh, Y. Harada, T. Takeuchi, M. Tada, M. Tagami, H. Ohtake, K. Hijioka, S. Saito, T. Onodera, D. Hara, K. Tokudome","doi":"10.1109/IITC.2004.1345755","DOIUrl":null,"url":null,"abstract":"A porous SiOCH film with k=2.3 is developed by a new concept PECVD, in which pore-involved molecules are piled up together to deposit a \"molecular-pore stacked, SiOCH (MPS)\" film. The pore size and the density of the film are controlled by designing the pore size and the steric-hindrance side-chains of the source molecules. A newly synthesized, 6-member ring-type, organo-siloxane with the side-chains of large steric-hindrance hydrocarbons realizes the MPS film with k=2.3. the basic feasibility of the MPS film is confirmed through the integration into Cu damascene interconnects. The MPS film is a strong candidate for the low-k, inter-metal-dielectrics in 45nm node, ASICs.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345755","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A porous SiOCH film with k=2.3 is developed by a new concept PECVD, in which pore-involved molecules are piled up together to deposit a "molecular-pore stacked, SiOCH (MPS)" film. The pore size and the density of the film are controlled by designing the pore size and the steric-hindrance side-chains of the source molecules. A newly synthesized, 6-member ring-type, organo-siloxane with the side-chains of large steric-hindrance hydrocarbons realizes the MPS film with k=2.3. the basic feasibility of the MPS film is confirmed through the integration into Cu damascene interconnects. The MPS film is a strong candidate for the low-k, inter-metal-dielectrics in 45nm node, ASICs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
