Demonstration of short range non-uniformities of the spectral parameters of photoluminescence bands in lattice mismatched InAlAs/InGaAs/InAlAs/InP heterostructures
{"title":"Demonstration of short range non-uniformities of the spectral parameters of photoluminescence bands in lattice mismatched InAlAs/InGaAs/InAlAs/InP heterostructures","authors":"C. Klingelhofer, S. Krawczyk, F. Nuban, M. Gendry","doi":"10.1109/ICIPRM.1994.328182","DOIUrl":null,"url":null,"abstract":"A wide range of InAlAs/InGaAs/InAlAs/InP and InGaAs/InP lattice mismatched heterostructures with different thicknesses and compositions of the InGaAs layer were grown on InP (001) by Molecular Beam Epitaxy (MBE) and investigated with high spatial resolution spectrally resolved scanning photoluminescence. The objective of this contribution is to demonstrate that different types of extended defects (misfit dislocations, threading dislocations, oval-shaped defects) and structural micro-heterogeneity in the InGaAs layers induce significant short range changes of the spectral parameters of the photoluminescence bands.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"254 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A wide range of InAlAs/InGaAs/InAlAs/InP and InGaAs/InP lattice mismatched heterostructures with different thicknesses and compositions of the InGaAs layer were grown on InP (001) by Molecular Beam Epitaxy (MBE) and investigated with high spatial resolution spectrally resolved scanning photoluminescence. The objective of this contribution is to demonstrate that different types of extended defects (misfit dislocations, threading dislocations, oval-shaped defects) and structural micro-heterogeneity in the InGaAs layers induce significant short range changes of the spectral parameters of the photoluminescence bands.<>
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