Low damage via formation with low resistance by NH3 thermal reduction for Cu/ultra low-k interconnects

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345678

H. Okamura, S. Ogawa

引用次数: 1

Abstract

In order to minimize plasma-damage on porous low-k films, a pre-clean treatment, NH3 thermal reduction, to remove CuOx thin layer from a via bottom before barrier metal deposition was investigated. A reduction rate of 3 nm/min for CuOx layer was obtained at 360 C degrees, and via resistance was reduced to 75% without any damage into porous low-k films such as increase of dielectric constant (k) and decrease in low-k film thickness, while conventional Ar or He/H2 plasma pre-clean treatments in severe damages into low-k-films.

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NH3热还原对Cu/超低k互连层的低损伤和低电阻

为了最大限度地减少等离子体对多孔低钾薄膜的损伤，研究了一种预清洁处理，即NH3热还原，在屏障金属沉积之前从通孔底部去除CuOx薄层。在360℃条件下，CuOx层的还原速率为3 nm/min，通孔电阻降至75%，且无介电常数(k)增加、低k膜厚度减少等损伤，而常规的Ar或He/H2等离子体预处理会严重损伤低k膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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