R. Donaton, D. Chidambarrao, J. Johnson, P. Chang, Yaocheng Liu, W. Henson, J. Holt, Xi Li, Jinghong Li, A. Domenicucci, A. Madan, K. Rim, C. Wann
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引用次数: 21
Abstract
A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain
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