E. Dharmarajan, Shengnian Song, L. Mclaughlin, J. Guan, J. Gazda, E. Lin, W. Qi, H. Shiraiwa, J. Hussey, J. Lansford, B. Banerjee
{"title":"Spacer etch optimization on high density memory products to eliminate core leakage failures","authors":"E. Dharmarajan, Shengnian Song, L. Mclaughlin, J. Guan, J. Gazda, E. Lin, W. Qi, H. Shiraiwa, J. Hussey, J. Lansford, B. Banerjee","doi":"10.1109/ISSM.2007.4446867","DOIUrl":null,"url":null,"abstract":"Through this work, we present a core leakage failure mechanism in our 90 nm high density memory products which was found to be related to etch process loading sensitivity to high density. Process optimization was done to fix the problem while maintaining sufficient etch margin against stringers.","PeriodicalId":325607,"journal":{"name":"2007 International Symposium on Semiconductor Manufacturing","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on Semiconductor Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2007.4446867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Through this work, we present a core leakage failure mechanism in our 90 nm high density memory products which was found to be related to etch process loading sensitivity to high density. Process optimization was done to fix the problem while maintaining sufficient etch margin against stringers.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
