Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology

Abstract

The Intel 4 CMOS FinFET technology delivers over 20% performance gains at iso-power over the prior generation (Intel 7). This paper reports reliability studies on the Intel 4 technology that demonstrate matched or better reliability while extending Moore's law in the areas of power, performance, and scaling over its predecessor. Industry-leading technology scaling comes with numerous challenges, including co-optimization of yield, performance, and reliability. This paper reports the development of Intel 4 technology with industry-standard reliability while delivering significant advancement in generational performance and density.