P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack
{"title":"Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs","authors":"P. Moens, A. Banerjee, M. Uren, M. Meneghini, S. Karboyan, I. Chatterjee, P. Vanmeerbeek, M. Casar, C. Liu, A. Salih, E. Zanoni, G. Meneghesso, Martin Kuball, M. Tack","doi":"10.1109/IEDM.2015.7409831","DOIUrl":null,"url":null,"abstract":"The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"73","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 73
Abstract
The role of buffer traps (identified as CN acceptors through current DLTS) in the off-state leakage and dynamic Ron of 650V rated GaN-on-Si power devices is investigated. The dynamic Ron is strongly voltage-dependent, due to the interplay between the dynamic properties of the CN traps and the presence of space-charge limited current components. This results in a complete suppression of dyn Ron degradation under HTRB conditions between 420V and 850V.
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