P. Nicollian, A. Krishnan, C. Chancellor, R. Khamankar
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引用次数: 28
Abstract
The paper shows that a minimum of two traps is required to cause breakdown in SiON films down to 10A. At least one trap must be an interface state and at least one must be a bulk state. At low voltages, the rate limiting step for breakdown is the generation of interface traps and is controlled by the release of H0
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