Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345750

D. Edelstein, C. Davis, L. Clevenger, M. Yoon, A. Cowley, T. Nogami, H. Rathore, B. Agarwala, S. Arai, A. Carbone, K. Chanda, S. Cohen, W. Cote, M. Cullinan, T. Dalton, S. Das, P. Davis, J. Demarest, D. Dunn, C. Dziobkowski, R. Filippi, J. Fitzsimmons, P. Flaitz, S. Gates, J. Gill, A. Grill, D. Hawken, K. Ida, D. Klaus, N. Klymko, M. Lane, S. Lane, J. Lee, W. Landers, W.-K. Li, Y. Lin, E. Liniger, X. Liu, A. Madan, S. Malhotra, J. Martin, S. Molis, C. Muzzy, D. Nguyen, S. Nguyen, M. Ono, C. Parks, D. Questad, D. Restaino, A. Sakamoto, T. Shaw, Y. Shimooka, A. Simon, E. Simonyi, S. Tempest, T. Van Kleeck, S. Vogt, Y. Wang, W. Wille, J. Wright, C. Yang, T. Ivers

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引用次数: 13

Abstract

We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.

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90nm SOI/Cu/SiCOH技术的可靠性、产率和性能

我们报告了一种具有Cu/SiCOH低k互连BEOL的90 nm CMOS技术的全面表征。重要的材料和集成工程带来了最高的可靠性，而不会降低低k的预期性能。在功能芯片上给出了BEOL和芯片封装可靠性、良率、低k膜参数、BEOL电容和电路延迟的各个方面的结果。所有结果都符合或超过我们的并发90纳米Cu/FTEOS技术，并支持扩展到65纳米。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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