Soft error rate cross-technology prediction on embedded DRAM

Yi-Pin Fang, B. Vaidyanathan, A. Oates
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引用次数: 10

Abstract

Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.
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嵌入式DRAM软错误率跨技术预测
嵌入式DRAM由于具有比SRAM更高的密度,在片上系统(SOC)中得到了广泛应用。随着技术的进步,越来越多的嵌入式动态随机存取存储器(DRAM)被嵌入到芯片中,嵌入式DRAM的软错误率(SER)已成为一个重要的课题。实验表明,α - ser随嵌入式DRAM缩放而迅速下降,而中子- ser受影响较小。我们开发了一种简单快速的方法来预测嵌入式DRAM的中子和α - ser缩放趋势,而无需使用复杂的模拟程序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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