{"title":"Highly selective etching of InGaAs on InAlAs in HBr plasma","authors":"I. Adesida, S. Agarwala, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1993.380567","DOIUrl":null,"url":null,"abstract":"A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<>
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