Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10118099

L. Grenouillet, J. Barbot, J. Laguerre, S. Martin, C. Carabasse, M. Louro, M. Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, T. Magis, C. Jahan, F. Andrieu, J. Coignus

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Abstract

Ferroelectricity in doped HfO2 thin films was reported for the first time 12 years ago, generating strong interest in the non-volatile memory and logic community. Thanks to their CMOS compatibility and potential for scaling, hafnia-based Ferroelectric Random Access Memories (FeRAMs), Ferroelectric Tunnel Junctions (FTJ s) and Ferroelectric Field Effect Transistors (FeFETs) are not only a breakthrough with respect to conventional perovskite-based ferroelectric (FE) devices but also potentially a revolution from an application prospective, in particular considering the non-volatility and intrinsic energy efficiency of these devices. However, their maturity is currently too low to consider practical applications. In this paper, we therefore focus on the reliability assessment of Metal/FE/Metal (MFM) and Metal/FE/Dielectric/Metal (MFDM) stacks, either in the form of large area ferroelectric capacitors, or in the form of kbit arrays integrated in CMOS Back-End of Line.

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存储和人工智能应用中基于铪的铁电器件和阵列的可靠性评估(应邀)

12年前，掺杂HfO2薄膜中的铁电性首次被报道，引起了非易失性存储器和逻辑界的强烈兴趣。由于其CMOS兼容性和缩放潜力，基于铪的铁电随机存取存储器(FeRAMs)，铁电隧道结(FTJ)和铁电场效应晶体管(fefet)不仅是传统钙钛矿基铁电(FE)器件的突破，而且从应用前景来看也可能是一场革命，特别是考虑到这些器件的非易失性和内在能量效率。然而，目前它们的成熟度太低，无法考虑实际应用。因此，在本文中，我们将重点研究金属/FE/金属(MFM)和金属/FE/介电/金属(MFDM)堆叠的可靠性评估，无论是以大面积铁电电容器的形式，还是以集成在CMOS后端线中的kbit阵列的形式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2023 IEEE International Reliability Physics Symposium (IRPS)

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