{"title":"Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO/sub 2/ gate dielectrics","authors":"S.J. Lee, S. Rhee, R. Clark, D. Kwong","doi":"10.1109/VLSIT.2002.1015397","DOIUrl":null,"url":null,"abstract":"A systematic study of long-term reliability of ultra thin CVD HfO/sub 2/ gate stack (EOT=10.5 /spl Aring/) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (TBO), defect generation rate, and critical defect density are studied. It is found that T/sub BD/ is polarity-independent (T/sub BD,-Vg/=T/sub BD,+Vg/). TDDB lifetime acceleration shows that 10-year lifetime of HfO/sub 2/ gate stack is projected at Vg=1.63 V for EOT=8.6 /spl Aring/ and Vg=1.88 V for EOT=10.6 /spl Aring/ at 25/spl deg/C. However, after temperature acceleration of 150/spl deg/C, area scaling to 0.1 cm/sup 2/, and the projection to low percentage failure rate of 0.01%, the maximum operating voltages are projected to be Vg=0.6 V for EOT 8.6 /spl Aring/ and Vg=0.75 V for EOT=10.6 /spl Aring/.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
A systematic study of long-term reliability of ultra thin CVD HfO/sub 2/ gate stack (EOT=10.5 /spl Aring/) with TaN gate electrode is presented. The polarity and area dependence and temperature acceleration of time-to-breakdown (TBO), defect generation rate, and critical defect density are studied. It is found that T/sub BD/ is polarity-independent (T/sub BD,-Vg/=T/sub BD,+Vg/). TDDB lifetime acceleration shows that 10-year lifetime of HfO/sub 2/ gate stack is projected at Vg=1.63 V for EOT=8.6 /spl Aring/ and Vg=1.88 V for EOT=10.6 /spl Aring/ at 25/spl deg/C. However, after temperature acceleration of 150/spl deg/C, area scaling to 0.1 cm/sup 2/, and the projection to low percentage failure rate of 0.01%, the maximum operating voltages are projected to be Vg=0.6 V for EOT 8.6 /spl Aring/ and Vg=0.75 V for EOT=10.6 /spl Aring/.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
