Recent advances in SiC materials and device technologies in Sweden

Abstract

In Sweden, silicon carbide technology is regarded as one of the prime research areas in microelectronics. The main driving force has been the power generation and power distribution industry and the need for low power loss systems. These needs are expected in part to be covered by replacing Si with SiC devices to utilize blocking voltages of 20 kV, higher temperature operation (300-400/spl deg/C), lower device losses and higher switching frequencies. The establishment of a state-of-the-art SiC device processing facility in Kista-Stockholm, Sweden by ABB further manifests the thrust towards SiC technology. This paper presents examples of the advances in materials growth technology, characterization, device fabrication results, device modeling and new application areas such as high temperature sensors.