Novel wafer-scale uniform layer-by-layer etching technology for line edge roughness reduction and surface flattening of 3D Ge channels

Y. Morita, T. Maeda, H. Ota, W. Mizubayashi, S. O'Uchi, M. Masahara, T. Matsukawa, K. Endo
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引用次数: 1

Abstract

We have developed a novel wafer-scale uniform layer-by-layer etching technology based on the etching reaction of oxygen molecules with Ge surfaces. The advantages of this etching technology are as follows. (1) Layer-by-layer etching can be achieved, yielding an atomically flat step-terrace surface. (2) Because of the very small activation energy (<;0.1 eV) of the etching reaction, this technology is free from etch rate variation caused by temperature inhomogeneity over large wafers. (3) No plasma damage occurs as a result of O2 molecule reactions with anisotropic etching. These features are applicable to the fabrication of three-dimensional Ge channels.
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一种新的晶圆尺度均匀逐层蚀刻技术,用于降低3D锗通道的线边缘粗糙度和表面平坦化
我们基于氧分子与锗表面的蚀刻反应,开发了一种新的晶圆级均匀逐层蚀刻技术。这种蚀刻技术的优点如下:(1)可以实现逐层蚀刻,产生原子级平坦的阶梯台阶表面。(2)由于蚀刻反应的活化能非常小(< 0.1 eV),因此该技术不受大晶圆上温度不均匀性引起的蚀刻速率变化的影响。(3)各向异性蚀刻O2分子反应不会造成等离子体损伤。这些特点适用于三维锗通道的制备。
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