{"title":"High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays","authors":"M. Esmaeili-Rad, A. Sazonov, A. Nathan","doi":"10.1109/IEDM.2006.346768","DOIUrl":null,"url":null,"abstract":"We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V
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