Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)

Abstract

In this paper, we review the gate reliability of the GaN MOSc-HEMT as well as the specific method to address the peculiarities of these transistors. The long term forward gate TDDB will be explored showing the impact of the gate recession and gate material on the expected maximum gate oxide field $(\mathbf{E_{OX, MAX}})$ at 10 years. The gate related threshold voltage instabilities (pBTI and nBTI) are reviewed showing the interplay between epitaxy material and gate oxide process. Finally, the high drain voltage influence on Vth (HVBTI) is studied through the development of specific and dedicated setup allowing a deeper understanding of the device instabilities during operation.