A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108 Endurance and Excellent Retention

Abstract

In this paper, we demonstrated successfully a quad-level cell (QLC) of a resistive-gate memory. It was implemented in a 1k bits chip with integration of FinFET core on a mature logic platform. Comprehensive reliabilities have been examined. The results show the forming-free property, low programming current $(< \mu \mathrm{A})$, high endurance and excellent data retention. A record high 5×108 endurance can be achieved. Furthermore, a 4-bit-per-cell (16 levels) has been demonstrated successfully. The chip-level performance is also analyzed, showing well disturbance-immune during SET/RESET, READ, which kept healthy signal-to-noise margin, 2-3x. This architecture is a strong candidate for the next generation resistance memory.