K. Saraswat, C. O. Chui, Donghyun Kim, T. Krishnamohan, A. Pethe
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引用次数: 82
Abstract
Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si
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