Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond

Xiaobo Jiang, Xingsheng Wang, Runsheng Wang, B. Cheng, A. Asenov, Ru Huang
{"title":"Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond","authors":"Xiaobo Jiang, Xingsheng Wang, Runsheng Wang, B. Cheng, A. Asenov, Ru Huang","doi":"10.1109/IEDM.2015.7409787","DOIUrl":null,"url":null,"abstract":"Predictive compact models for two key variability sources in FinFET technology, the gate edge roughness (GER) and Fin edge roughness (FER), are proposed for the first time, and integrated into industry standard BSIM-CMG core model. Excellent accuracy and predictivity is verified through atomistic TCAD simulations. The inherent correlations between the variations of device electrical parameters are well captured. In addition, an abnormal non-monotonous dependence of variations on Fin-width is observed, which can be explained with the newly found correlation between random variations and electrostatic integrity in FinFETs. The impacts of GER and FER on circuits are efficiently predicted for 16/14nm node and beyond, providing helpful guidelines for variation-aware design and technology process development.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29

Abstract

Predictive compact models for two key variability sources in FinFET technology, the gate edge roughness (GER) and Fin edge roughness (FER), are proposed for the first time, and integrated into industry standard BSIM-CMG core model. Excellent accuracy and predictivity is verified through atomistic TCAD simulations. The inherent correlations between the variations of device electrical parameters are well captured. In addition, an abnormal non-monotonous dependence of variations on Fin-width is observed, which can be explained with the newly found correlation between random variations and electrostatic integrity in FinFETs. The impacts of GER and FER on circuits are efficiently predicted for 16/14nm node and beyond, providing helpful guidelines for variation-aware design and technology process development.
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16/14nm及以上节点FinFET技术随机变化的预测紧凑建模
首次提出了FinFET技术中栅极边缘粗糙度(GER)和翅片边缘粗糙度(FER)这两个关键变化源的预测紧凑模型,并将其集成到行业标准BSIM-CMG核心模型中。通过原子TCAD仿真验证了该方法具有良好的准确性和预测性。器件电气参数变化之间的内在相关性被很好地捕获。此外,观察到鳍宽变化的异常非单调依赖性,这可以用新发现的随机变化与finfet静电完整性之间的相关性来解释。我们有效地预测了16/14nm及以上节点的GER和FER对电路的影响,为变化感知设计和工艺开发提供了有用的指导。
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