T. Krishnamohan, C. Jungemann, Donghyun Kim, E. Ungersboeck, S. Selberherr, P. Wong, Y. Nishi, K. Saraswat
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引用次数: 14
Abstract
Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), 1D Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, Si, SiGe and Ge, p-MOS DGFETs is thoroughly and systematically investigated
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