H. Nagai, K. Maekawa, M. Iwashita, M. Muramatsu, K. Kubota, K. Hinata, T. Kokubo, A. Shiota, M. Hattori, H. Nagano, K. Tokushige, M. Kodera, K. Mishima
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引用次数: 1
Abstract
To achieve effective k value less than 3.0, we investigated spin-on dielectric stack damascene integration scheme with electron beam (EM) cure. By using porous-MSQ (k=2.3) as ILD and dense-MSQ (k=2.9) as hard mask (HM), effective k value could be lowered, and by EB curing the full dielectric stack only once, mechanical strength for both ILD and HM were improved and a reduced thermal budget was obtained. In addition, a low damage resist strip process for the low-k materials was evaluated. These elements of BEOL technology have applicability to 45nm technology node and beyond.
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