K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii
{"title":"RF CMOS-MEMS Switch with Low-Voltage Operation for Single-Chip RF LSIs","authors":"K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii","doi":"10.1109/IEDM.2006.346891","DOIUrl":null,"url":null,"abstract":"This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for more than 1 billion cycles
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
