Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes
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引用次数: 1
Abstract
Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter $Q^{\ast}= 0.21$ eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.
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