C. Wu, B. Hung, A. Chin, S. Wang, W. Chen, X.P. Wang, M. Li, C. Zhu, Y. Jin, H. Tao, S. Chen, M. Liang
{"title":"High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference","authors":"C. Wu, B. Hung, A. Chin, S. Wang, W. Chen, X.P. Wang, M. Li, C. Zhu, Y. Jin, H. Tao, S. Chen, M. Liang","doi":"10.1109/IEDM.2006.346859","DOIUrl":null,"url":null,"abstract":"The authors report novel 1000degC-stable [Ir<sub>3</sub>Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phi<sub>m-eff</sub> of 5.08 and 4.24 eV, low V<sub>t</sub> of -0.10 and 0.18 V, high mobility of 84 and 217 cm<sup>2</sup>/Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measured","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"106 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
The authors report novel 1000degC-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phim-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measured
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