Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric

J. Lloyd, T. Shaw, E. Liniger
{"title":"Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric","authors":"J. Lloyd, T. Shaw, E. Liniger","doi":"10.1109/IRWS.2005.1609559","DOIUrl":null,"url":null,"abstract":"In a study of the TDDB performance of an ultra-low-k (ULK) dielectric (JSR 5537 k = 2.3) it was found that the presence of moisture significantly reduced the TDDB lifetime as well as increased leakage and capacitance. It was also observed that the field coefficient (/spl gamma/) in an \"E\" TDDB lifetime model was significantly larger in \"dry\" samples than in \"wet\" samples.","PeriodicalId":214130,"journal":{"name":"2005 IEEE International Integrated Reliability Workshop","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Integrated Reliability Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2005.1609559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

Abstract

In a study of the TDDB performance of an ultra-low-k (ULK) dielectric (JSR 5537 k = 2.3) it was found that the presence of moisture significantly reduced the TDDB lifetime as well as increased leakage and capacitance. It was also observed that the field coefficient (/spl gamma/) in an "E" TDDB lifetime model was significantly larger in "dry" samples than in "wet" samples.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
水分对超低k (ULK)介质中随时间变化的介电击穿(TDDB)行为的影响
在对超低k (ULK)电介质(JSR 5537 k = 2.3)的TDDB性能的研究中发现,水分的存在显著降低了TDDB的寿命,并增加了泄漏和电容。还观察到,在“E”TDDB寿命模型中,“干”样品的场系数(/spl gamma/)明显大于“湿”样品。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Charge trapping dependence on the physical structure of ultra-thin ALD-HfSiON/TiN gate stacks An integrated solution with a novel bi-layer etch stop to eliminate 90 nm Cu/low k package fail Impact of moisture on porous low-k reliability Characterization and modeling NBTI for design-in reliability Charge retention of silicided and unsilicided floating gates in embedded logic nonvolatile memory
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1