F. Dubecký, J. Darmo, M. Darviras, A. Forster, P. Kordos, H. Luth
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引用次数: 2
Abstract
A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.
介绍了一种基于电容C(t)和交流电导G(t)同时瞬态分析的适用于半绝缘(SI)材料的DLTS的新改进方法——导纳瞬态光谱(ATS)。给出了C(t)、G(t)及其微分dC(t)、dG(t)和相关Sc(t)、SG(t)形式的公式。在仿真的基础上，总结了ATS的主要特点。将ATS应用于大量未掺杂和低温MBE SI GaAs的深能级态研究。其中一些结果在先前发表的结果的背景下进行了简要讨论。
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