Distributed PDN Modeling Approach for Accurate Jitter Estimation in High-Speed NAND Flash Memory

Sayed Mobin, Pranav Balachander, Asha Sharma, Venkatesh Ramachandra
{"title":"Distributed PDN Modeling Approach for Accurate Jitter Estimation in High-Speed NAND Flash Memory","authors":"Sayed Mobin, Pranav Balachander, Asha Sharma, Venkatesh Ramachandra","doi":"10.1109/EPEPS53828.2022.9947093","DOIUrl":null,"url":null,"abstract":"Due to aggressive storage capacity demands, multiple NAND Flash die are often stacked in a highly integrated, complex package system. As data-rate increases, bit time (UI) is shrinking, and accurate measurement of the data valid window and jitter become very important. Power distribution network (PDN) noise affects the overall system timing. The conventional way of PDN modeling approach in NAND Flash memory System level analysis, cannot accurately predict the system level jitter and deviates from the actual product level performance. In this paper, an accurate method for PDN-induced jitter analysis in NAND Flash system-level operation is described. Simulated PDN-induced jitter results are validated through characterization system and product level measurement jitter.","PeriodicalId":284818,"journal":{"name":"2022 IEEE 31st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 31st Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS53828.2022.9947093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Due to aggressive storage capacity demands, multiple NAND Flash die are often stacked in a highly integrated, complex package system. As data-rate increases, bit time (UI) is shrinking, and accurate measurement of the data valid window and jitter become very important. Power distribution network (PDN) noise affects the overall system timing. The conventional way of PDN modeling approach in NAND Flash memory System level analysis, cannot accurately predict the system level jitter and deviates from the actual product level performance. In this paper, an accurate method for PDN-induced jitter analysis in NAND Flash system-level operation is described. Simulated PDN-induced jitter results are validated through characterization system and product level measurement jitter.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高速NAND闪存中精确抖动估计的分布式PDN建模方法
由于对存储容量的巨大需求,多个NAND闪存芯片通常堆叠在一个高度集成的复杂封装系统中。随着数据速率的提高,比特时间(UI)不断缩短,准确测量数据有效窗口和抖动变得非常重要。PDN (Power distribution network)噪声会影响整个系统的时序。传统的PDN建模方法在NAND闪存系统级分析中,不能准确预测系统级抖动,偏离实际产品级性能。本文描述了一种精确分析NAND闪存系统级工作中pdn引起的抖动的方法。通过表征系统和产品级测量抖动验证了模拟pdn引起的抖动结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Improvement of Radiation Characteristics of a 300-GHz On-Chip Patch Antenna with Epoxy Mold Compound (EMC) Encapsulation Codimensional Optimization of Differential Via Padstacks NEXT Effect in Pin-area Routing at Receiver End from Via to Trace Coupling in a 32 Gb/s Channel Interconnect Modeling using a Surface Admittance Operator Derived with the Fokas Method CISPR 25 Radiated Emission Simulation and Measurement Correlation of an Automotive Reinforced Isolated Switch Driver
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1