B. Opitz, A. Kohl, J. Kováč, S. Brittner, F. Grunberg, K. Heime, J. Woitok
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引用次数: 0
Abstract
We report photocurrent spectroscopy at 77 K as well as at room temperature on MOVPE grown PIN diodes containing In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattices as a function of bias voltage. Pronounced excitonic features were observed, and clear evidence for the formation of Stark ladders was found for the first time in this material system. The absorption edge is energetically below but close to 1.55 /spl mu/m. Improved optical spectra are obtained for structures grown with a compensation of strain in well and barrier.<>
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