Semi-Insulating Inp Obtained by Co-Implantation of Mg and Ti

M. Salvi, J. Viallet, H. L'haridon, P. Favennec, M. Gauneau
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Abstract

Implantation of magnesium acceptor in semi-insulating InP:Fe leads to a p-type layer which is further implanted with the low diffusitivity titanium deep donor, the sample recovering the semi-insulating behavior.
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Mg和Ti共注入制备半绝缘Inp
在半绝缘的InP:Fe中注入镁受体形成p型层,再注入低扩散率的钛深给体,样品恢复半绝缘行为。
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