Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor

M. Kobayashi, T. Hiramoto
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引用次数: 4

Abstract

We fabricated [100] and [110] directed nano wire MOSFET (NWFET), which works as NFET and PFET in the same channel. By comparing [100] and [110] direction, significantly small threshold voltage (Vth) fluctuation is experimentally observed in [110] PFET for the first time. This result supports the superiority of [110] NW PFET. Extremely narrow NWFET works as single-electron/single-hole transistors (SET/SHT). By comparing [100] and [110] direction, channel direction dependence of Coulomb blockade (CB) oscillations is experimentally clarified for the first time. We realize the highest performance in [100] SHT
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硅纳米线的量子结构及其对纳米线MOSFET和单电子晶体管影响的实验研究
我们制造了[100]和[110]定向纳米线MOSFET (NWFET),它们在同一通道中作为NFET和fet工作。通过对比[100]和[110]两个方向,我们首次在实验中观察到[110]fet中阈值电压(Vth)的波动非常小。这一结果支持了[110]NW fet的优越性。极窄NWFET工作原理为单电子/单孔晶体管(SET/SHT)。通过对[100]和[110]两个方向的比较,首次从实验上阐明了库仑阻断振荡的通道方向依赖性。我们实现了[100]SHT的最高性能
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