{"title":"ECR-plasma-deposited gate dielectrics for InP MISFETs","authors":"A. Fathimulla, D. Gutierrez","doi":"10.1109/ICIPRM.1993.380587","DOIUrl":null,"url":null,"abstract":"The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO/sub 2/ gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO/sub 2/ exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The authors present the properties of SiO/sub 2/ and Si/sub 3/N/sub 4/ films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO/sub 2/ gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO/sub 2/ exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices.<>
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