Defects spectroscopy in SiO2 by statistical random telegraph noise analysis

R. Gusmeroli, C. M. Compagnoni, A. Riva, A. Spinelli, A. Lacaita, M. Bonanomi, A. Visconti
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引用次数: 37

Abstract

We investigate the properties of traps in the SiO2 by means of a statistical analysis of random telegraph noise in Flash memory arrays. We develop a new physical model for the statistical superposition of the elementary Markov processes describing traps occupancy, able to explain the experimental evidence for cell threshold voltage instability. Comparing modeling results with experimental data allowed the estimation of the energy and space distribution of oxide defects
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统计随机电报噪声分析SiO2缺陷光谱
通过对闪存阵列随机电报噪声的统计分析,研究了SiO2中陷阱的性质。我们为描述陷阱占用的基本马尔可夫过程的统计叠加建立了一个新的物理模型,能够解释电池阈值电压不稳定的实验证据。将模拟结果与实验数据进行比较,可以估计氧化缺陷的能量和空间分布
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