T. Suzuki, Akira Uedono, Tomoji Nakamura, Y. Mizushima, H. Kitada, Y. Koura
{"title":"Direct observation of vacancy defects in electroplated Cu films","authors":"T. Suzuki, Akira Uedono, Tomoji Nakamura, Y. Mizushima, H. Kitada, Y. Koura","doi":"10.1109/IITC.2004.1345697","DOIUrl":null,"url":null,"abstract":"Vacant defects in electroplated Cu films are investigated by positron annihilation and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The evolution of vacancies was divided into two regions with respect to the annealing temperature. For temperature below 300/spl deg/C, the behavior of vacancies was closely related to grain growth. When the annealing temperature was over 300/spl deg/C, the vacancy concentration was estimated to be of the order of 10/sup 19/ /spl sim/10/sup 20//cm/sup 3/, which is similar to void volume estimates in stress induced voiding (SIV) failure.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345697","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Vacant defects in electroplated Cu films are investigated by positron annihilation and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The evolution of vacancies was divided into two regions with respect to the annealing temperature. For temperature below 300/spl deg/C, the behavior of vacancies was closely related to grain growth. When the annealing temperature was over 300/spl deg/C, the vacancy concentration was estimated to be of the order of 10/sup 19/ /spl sim/10/sup 20//cm/sup 3/, which is similar to void volume estimates in stress induced voiding (SIV) failure.
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